2SB1185F

更新时间： 2024-01-01 09:55:42

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
1页	64K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SB1185F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1185F 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

2SB1185 TRANSISTOR (PNP)

TO-220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

W (Tamb=25℃)

Collector current

I_CM:

1 2 3

-3

Collector-base voltage

V_(BR)CBO

-60

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50µA, I_E=0

Ic=-1mA, I_B=0

MIN

-60

-50

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-50µA, I_C=0

µA

V_CB=-40V, I_E=0

-1

I_EBO

Emitter cut-off current

V_EB=-4V, I_C=0

h_FE(1)

DC current gain

_CE=-3V, I_C=-0.5A

320

-1

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-2A, I_B=-0.2A

-1.5

MHz

V_CE=-5V, I_C=-0.5A, f=30MHz

C_ob

Collector output capacitance

_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

60-120

100-200

160-320

Marking

中文翻译

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