2SB1185F

更新时间： 2024-11-25 13:04:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管功率双极晶体管局域网
页数	文件大小	规格书
3页	245K
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数据手册

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2SB1185F 数据手册

Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747

2SB1184 / 2SB1243

Transistors

Power Transistor (−60V, −3A)

2SB1184 / 2SB1243

!External dimensions (Units : mm)

!Features

1) Low V^CE(sat).

2SB1184

2SB1243

V^CE(sat)= -0.5V (Typ.)

(I^C/IB = -2A / -0.2A)

2) Complements the 2SD1760 / 2SD1864.

2.5 0.2

+0.2

−0.1

6.8 0.2

2.3

6.5 0.2

C0.5

+0.2

5.1

0.5 0.1

−0.1

0.65Max.

0.65 0.1

0.75

0.9

0.55 0.1

1.0 0.2

0.5 0.1

2.3 0.2 2.3 0.2

(1) (2) (3)

!Structure

Epitaxial planar type

PNP silicon transistor

(1) (2)

(3)

2.54

1.05

0.45 0.1

(1) Base

(2) Collector

(3) Emitter

(1) Emitter

(2) Collector

(3) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : ATV

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−60

−50

−5

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

−3

A (DC)

Collector current

−4.5

A (Pulse) ∗1

Collector power

dissipation

2SB1184

2SB1243

W (T =25°C)

∗2

150

°C

Junction temperature

Tstg

−55~+150

Storage temperature

∗

1 Single pulse, Pw=100ms

2 Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

1/3

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