Datasheet > 2SB1185_15

2SB1185_15

更新时间： 2022-02-26 12:51:23

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	166K
描述
Silicon PNP Power Transistors

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2SB1185_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1185

DESCRIPTION

·With TO-220Fa package

·Low collector saturation votlage

·Complement to type 2SD1762

APPLICATIONS

·For use in low frequency power

amplifer applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-50

Open collector

-5

-3

I_CM

Collector current-peak

-4.5

2.0

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

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