Datasheet > 2SB1184Q(TO-251)

2SB1184Q(TO-251)

更新时间： 2024-02-16 19:48:42

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WEITRON		/
页数	文件大小	规格书
4页	451K
描述
Transistor

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技术参数
数据手册

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2SB1184Q(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SB1184Q(TO-251) 数据手册

2SB1184

PNP PLASTIC ENCAPSULATE TRANSISTORS

P b

Lead(Pb)-Free

Features:

1.BASE

2.COLLECTOR

3.EMITTER

* Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

TO-251

MAXIMUM RATINGS (TA=25ºC unless otherwise noted)

Symbol

Value

-60

-50

-5

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Unit

CBO

CEO

EBO

1.BASE

2.COLLECTOR

3.EMITTER

-3

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

+150

˚C

D-PAK(TO-252)

Storage Temperature Range

-55 to +150

˚C

stg

ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified)

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Parameter

Test Conditions

MIN TYP MAX UNIT

I_C=-50µA, I_E=0

-60

-50

-5

Collector-base breakdown voltage

I_C=-1mA, I_B=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-50µA, I_C=0

µA

V_CB=-40V, I_E=0

-1

I_EBO

V_EB=-4V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=-3V, I_C=-0.5A

I_C=-2A, I_B=-0.2A

390

-1

DC current gain

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-1.5A, I_B=-0.15A

V_CE=-5V, I_C=-0.5A, f=30MHz

V_CB=-10V, I_E=0, f=1MHz

-1.2

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

82-180

120-270

180-390

Range

Marking

WEITRON

http://www.weitron.com.tw

05-Oct-2010

1/4

12 3 4

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