Datasheet > 2SB1184_10

2SB1184_10

更新时间： 2024-09-23 05:57:31

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	159K
描述
Power Transistor (-60V, -3A)

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中文翻译

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数据手册

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2SB1184_10 数据手册

Power Transistor (-60V, -3A)

2SB1184 / 2SB1243

Features

Dimensions (Unit : mm)

1) Low V^CE(sat).

2SB1184

2SB1243

V^CE(sat)= -0.5V (Typ.)

(I^C/IB = -2A / -0.2A)

2) Complements the 2SD1760 / 2SD1864.

2.5 0.2

+0.2

−0.1

6.8 0.2

2.3

6.5 0.2

C0.5

+0.2

5.1

0.5 0.1

−0.1

Structure

Epitaxial planar type

PNP silicon transistor

0.65Max.

0.65 0.1

0.75

0.9

0.55 0.1

1.0 0.2

0.5 0.1

2.3 0.2 2.3 0.2

(1) (2) (3)

(1) (2)

2.54

(3)

2.54

1.05

0.45 0.1

(1) Base

(2) Collector

(3) Emitter

(1) Emitter

(2) Collector

(3) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : ATV

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

−60

−50

−5

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

−3

A (DC)

Collector power

dissipation

2SB1184

2SB1243

W (T =25°C)

∗1

150

°C

Junction temperature

Storage temperature

Tstg

−55 to 150

∗

1 Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

Unit

Conditions

−60

−50

−5

−

= −50μA

= −1mA

Collector-base breakdown voltage

BV^CBO

−

Collector-emitter breakdown voltage BVCEO

−

= −50μA

CB= −40V

EB= −4V

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

−1

390

μA

CBO

EBO

CE(sat)

−

Emitter cutoff current

−

IC/IB= −2A/ −0.2A

Collector-emitter saturation voltage

DC current transfer ratio

−

∗

CE= −3V, I

= −0.5A

=0.5A, f=30MHz

=0A, f=1MHz

120

−

CE= −5V, I

−

MHz

Transition frequency

Output capacitance

CB= −10V, I

Cob

∗

Measured using pulse current.

www.rohm.com

2010.02 - Rev.C

1/3

12 3 4

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