2SB1182-P
2SB1182-Q
2SB1182-R
M C C
TM
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
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Micro Commercial Components
Features
xꢀ Low Collector Saturation Voltage
PNP Silicon
Epitaxial Transistors
xꢀ Execllent current-to-gain characteristics
·
·
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
DPAK
J
Maximum Ratings
H
Symbol
Rating
Rating
Unit
VCEO
Collector-Emitter Voltage
-32
V
1
2
3
C
I
O
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
-40
-5.0
-2.0
V
V
A
F
4
E
PC
Collector power dissipation
1.5
W
M
TJ
Junction Temperature
Storage Temperature
150
к
к
V
K
TSTG
-55 to +150
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
G
V(BR)CBO
Collector-base Breakdown Voltage
(IC=-50uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
Emitter-base Breakdown Voltage
(IE=-50uAdc, IC=0)
Collector-Base Cutoff Current
(VCB=-20Vdc,IE=0)
Emitter-Base Cutoff Current
(VEB=-4Vdc, IC=0)
DC Current Gain
(IC=-0.5Adc, VCE=-3.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-2Adc, IB=-200mAdc)
-40
---
---
Vdc
V(BR)CEO
V(BR)EBO
ICBO
-32
-5
---
---
---
---
---
---
Vdc
Vdc
Q
A
---
-1.0
-1.0
uAdc
uAdc
L
IEBO
---
D
B
PIN 1. BASE
PIN 2.4 COLLECTOR
PIN 3. EMITTER
hFE(1)
VCE(sat)
fT
82
---
---
390
-0.8
---
---
Vdc
MHz
pF
---
DIMENSIONS
Transition Frequency
100
50
INCHES
MAX
MM
DIM
A
B
C
D
E
MIN
MIN
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
(VCE=-5Vdc, IC=-500mAdc,f=30MHz)
Collector output capacitance
(VCB=-10Vdc, IE=0,f=1.0MHz)
0.087
0.000
0.026
0.018
0.256
0.201
0.094
0.005
0.034
0.023
0.264
0.215
2.20
0.00
0.66
0.46
6.50
5.10
Cob
---
---
ꢀ
F
G
H
I
J
K
L
0.190
0.114
4.83
2.90
0.236
0.086
0.386
0.244
0.094
0.409
6.00
2.18
9.80
6.20
2.39
10.40
CLASSIFICATION OF HFE (1)
0.055
0.067
1.40
1.70
Rank
P
Q
R
M
0.063
1.60
1.10
0.00
5.35
O
0.043
0.051
1.30
Range
82-180
120-270
180-390
Q
V
0.000
0.012
0.30
0.211
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Revision: A
20/1016/03