Datasheet > 2SB1182R-HAF

2SB1182R-HAF

更新时间： 2024-11-26 14:53:11

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	555K
描述
功率三极管

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中文翻译

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数据手册

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2SB1182R-HAF 数据手册

2SB1182R-HAF

PNP Silicon Epitaxial Planar Transistor

for power switching and amplifier applications

Feature

• Halogen and Antimony Free(HAF)

RoHS compliant

1. Base 2. Collector 3. Emitter

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

T_a= 25℃

T_C= 25℃

1.25

Power Dissipation

P_tot

Junction Temperature

Storage Temperature

T_j

150

℃

T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

100

Unit

℃/W

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

12.5

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 4

Dated: 28/05/2021 Rev: 01

12 3 4

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