Datasheet > 2SB1182R(TO-251)

2SB1182R(TO-251)

更新时间： 2024-11-26 08:16:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	217K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB1182R(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1182R(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2Plastic-Encapsulate Transistors

TO-251

TO-252-2

2SB1182 TRANSISTOR (PNP)

FEATURES

Power dissipation

1.BASE

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

2.COLLECTOR

3EMITTER

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Units

-32

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-2

P_C

1.5

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

-40

-32

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-50µA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-50µA,I_C=0

I_CBO

I_EBO

V_CB=-20V,I_E=0

-1

µA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

h_FE(1)

V_CE(sat)

f_T

V_CE=-3V,I_C=-500mA

I_C=-2A,I_B=-200mA

V_CE=-5V,I_C=-0.5A,f=30MHz

V_CB=-10V,I_E=0,f=1MHz

390

-0.8

Collector-emitter saturation voltage

Transition frequency

100

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

82-180

120-270

180-390

Range

中文翻译

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