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2SB1182-R-TP PDF预览

2SB1182-R-TP

更新时间: 2024-02-25 00:51:21
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
4页 420K
描述
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, LEAD FREE, PLASTIC, DPAK-3

2SB1182-R-TP 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP功耗环境最大值:10 W
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SB1182-R-TP 数据手册

 浏览型号2SB1182-R-TP的Datasheet PDF文件第2页浏览型号2SB1182-R-TP的Datasheet PDF文件第3页浏览型号2SB1182-R-TP的Datasheet PDF文件第4页 
2SB1182-P  
2SB1182-Q  
2SB1182-R  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
xꢀ Low Collector Saturation Voltage  
PNP Silicon  
Epitaxial Transistors  
xꢀ Execllent current-to-gain characteristics  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
DPAK  
J
Maximum Ratings  
H
Symbol  
Rating  
Rating  
Unit  
VCEO  
Collector-Emitter Voltage  
-32  
V
1
2
3
C
I
O
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
-40  
-5.0  
-2.0  
V
V
A
F
4
E
PC  
Collector power dissipation  
1.5  
W
M
TJ  
Junction Temperature  
Storage Temperature  
150  
к
к
V
K
TSTG  
-55 to +150  
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
G
V(BR)CBO  
Collector-base Breakdown Voltage  
(IC=-50uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc, IB=0)  
Emitter-base Breakdown Voltage  
(IE=-50uAdc, IC=0)  
Collector-Base Cutoff Current  
(VCB=-20Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VEB=-4Vdc, IC=0)  
DC Current Gain  
(IC=-0.5Adc, VCE=-3.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-2Adc, IB=-200mAdc)  
-40  
---  
---  
Vdc  
V(BR)CEO  
V(BR)EBO  
ICBO  
-32  
-5  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
Q
A
---  
-1.0  
-1.0  
uAdc  
uAdc  
L
IEBO  
---  
D
B
PIN 1. BASE  
PIN 2.4 COLLECTOR  
PIN 3. EMITTER  
hFE(1)  
VCE(sat)  
fT  
82  
---  
---  
390  
-0.8  
---  
---  
Vdc  
MHz  
pF  
---  
DIMENSIONS  
Transition Frequency  
100  
50  
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
MIN  
MIN  
MAX  
2.40  
0.13  
0.86  
0.58  
6.70  
5.46  
NOTE  
(VCE=-5Vdc, IC=-500mAdc,f=30MHz)  
Collector output capacitance  
(VCB=-10Vdc, IE=0,f=1.0MHz)  
0.087  
0.000  
0.026  
0.018  
0.256  
0.201  
0.094  
0.005  
0.034  
0.023  
0.264  
0.215  
2.20  
0.00  
0.66  
0.46  
6.50  
5.10  
Cob  
---  
---  
F
G
H
I
J
K
L
0.190  
0.114  
4.83  
2.90  
0.236  
0.086  
0.386  
0.244  
0.094  
0.409  
6.00  
2.18  
9.80  
6.20  
2.39  
10.40  
CLASSIFICATION OF HFE (1)  
0.055  
0.067  
1.40  
1.70  
Rank  
P
Q
R
M
0.063  
1.60  
1.10  
0.00  
5.35  
O
0.043  
0.051  
1.30  
Range  
82-180  
120-270  
180-390  
Q
V
0.000  
0.012  
0.30  
0.211  
www.mccsemi.com  
1 of 4  
Revision: A  
20/1016/03  

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