JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2Plastic-Encapsulate Transistors
TO-251
TO-252-2
2SB1182 TRANSISTOR (PNP)
FEATURES
Power dissipation
1.BASE
1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2.COLLECTOR
3EMITTER
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
-40
Units
V
1
-32
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-2
A
PC
1.5
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
-40
-32
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-50µA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50µA,IC=0
V
V
ICBO
IEBO
VCB=-20V,IE=0
-1
-1
µA
µA
Emitter cut-off current
VEB=-4V,IC=0
DC current gain
hFE(1)
VCE(sat)
fT
VCE=-3V,IC=-500mA
IC=-2A,IB=-200mA
VCE=-5V,IC=-0.5A,f=30MHz
VCB=-10V,IE=0,f=1MHz
82
390
-0.8
Collector-emitter saturation voltage
Transition frequency
V
100
50
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
82-180
120-270
180-390
Range