生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 135 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1973-6 | SANYO |
获取价格 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | SOT-346 | |
2SA1977 | NEC |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER | |
2SA1977 | RENESAS |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER | |
2SA1977 | KEXIN |
获取价格 |
PNP Epitaxial Silicon Transistor | |
2SA1977 | UTC |
获取价格 |
PNP | |
2SA1977(NE97733) | NEC |
获取价格 |
Discrete | |
2SA1977FB | NEC |
获取价格 |
UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR | |
2SA1977-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SA1977-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SA1977G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, |