2N7336JANTX

更新时间： 2024-09-17 12:52:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	444K
描述
POWER MOSFET THRU-HOLE (MO-036AB)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7336JANTX 数据手册

PD-90436G

IRFG6110

JANTX2N7336

JANTXV2N7336

POWER MOSFET

THRU-HOLE (MO-036AB)

REF:MIL-PRF-19500/598

100V, Combination 2N-2P-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

IRFG6110

RDS(on)

0.7Ω

1.4Ω

1.0A

-0.75A

CHANNEL

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resistance

combined with high transconductance. HEXFET transistors

also feature all of the well-established advantages of MOSFETs,

such as voltage control, very fast switching, ease of paralleling

and electrical parameter temperature stability. They are well-

suited for applications such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, high energy

pulse circuits, and virtually any application where high reliability

is required. The HEXFET transistor’s totally isolated package

eliminates the need for additional isolating material between the

device and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings (Per Die)

Parameter

N-Channel

1.0

P-Channel

-0.75

-0.5

Units

@ V

=± 10V, T = 25°C Continuous Drain Current

=± 10V, T = 100°C Continuous Drain Current

0.6

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

4.0

-3.0

@ T = 25°C

1.4

W/°C

0.011

±20

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current À

75 Á

1.0

75 Ä

-0.75

0.14

dv/dt

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt

Operating Junction

0.14

5.5 Â

V/ns

-5.5 Å

-55 to 150

°C

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes, refer to the last page

www.irf.com

02/17/10

12 3 4 5 6 7...12

中文翻译

下载PDF

与2N7336JANTX相关器件

型号	品牌	获取价格	描述	数据表
2N7336JANTXV	INFINEON	获取价格	POWER MOSFET THRU-HOLE (MO-036AB)
2N7336PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel,
2N735	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 50MA I(C) \| TO-18
2N735A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 50MA I(C) \| TO-18
2N736	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 50MA I(C) \| TO-18
2N7368	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal
2N7368JAN	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
2N7368JANTX	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
2N7368JANTXV	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
2N7369	MICROSEMI	获取价格	PNP HIGH POWER SILICON TRANSISTOR