Datasheet > 2N7002DWQ

2N7002DWQ

更新时间： 2023-12-06 20:07:37

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	752K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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2N7002DWQ 数据手册

2N7002DWQ

1.0

0.8

T_J= 25°C

0.6

0.4

0.2

0.4

I_D, DRAIN CURRENT (A)

Figure 2 On-Resistance vs. Drain Current

0.6

0.8

1.0

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1 On-Region Characteristics

2.0

1.5

V_GS= 5.0V, I_D= 0.05A

1.0

0.5

-55 -30

-5

70 95

120 145

10 12 14 16 18

V_GS, GATE TO SOURCE VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (°C)

Figure 4 On-Resistance vs. Gate-Source Voltage

Figure 3 On-Resistance vs. Junction Temperature

DS(on)

Limited

= 10s

0.1

= 1s

= 100ms

= 10ms

= 1ms

0.01

= 100µs

100µs

= 150°C

150°C

= 25°C

25°C

J(max)

Single Pulse

0.001

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 5 SOA, Safe Operation Area

3 of 5

www.diodes.com

August 2023

2N7002DWQ

Document number: DS43177 Rev. 3 - 2

1 234 5

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