Datasheet > 2N5582

2N5582

更新时间： 2024-01-18 18:59:18

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
1页	32K
描述
Chip Type 2C2222A Geometry 0400 Polarity NPN

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技术参数
数据手册

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2N5582 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.78
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N5582 数据手册

Data Sheet No. 2C2222A

Generic Packaged Parts:

Chip Type 2C2222A

Geometry 0400

Polarity NPN

2N2219, 2N2219A, 2N2222,

2N2222A

Chip type 2C2222A by Semicoa

Semiconductors provides perfor-

mance similar to these devices.

Product Summary:

APPLICATIONS: Designed for general

purpose switching and amplifier applica-

tions.

Part Numbers:

2N2222A, 2N2222, 2N2219, 2N2219A, 2N2219AL,

2N2222AUB, SD2222A, SD2222AF, SQ2222A,

SQ2222AF, 2N5582, 2N6989, 2N6990

Features: Medium power ratings

Mechanical Specifications

Top

Backside

Emitter

Base

Al - 24 kÅ min.

Au - 6.5 kÅ nom.

4.0 mils x 4.0 mils

8 mils nominal

Metallization

Bonding Pad Size

Die Thickness

Chip Area

20 mils x 20 mils

Silox Passivated

Top Surface

Electrical Characteristics

T_A= 25^oC

Parameter

BV_CEO

Test conditions

Min

Max

---

Unit

V dc

nA dc

---

I_C= 10 mA, I_B= 0

I_C= 10 µA, I_E= 0

I_E= 10 µA, I_C= 0

V_CB= 50 V, I_E= 0

BV_CBO

BV_EBO

I_CBO

---

6.0

---

h_FE

I_C= 150 mA dc, V_CE= 10 V

100

300

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

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