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2N5599 PDF预览

2N5599

更新时间: 2024-11-01 07:28:55
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页数 文件大小 规格书
3页 115K
描述
Silicon PNP Power Transistors

2N5599 数据手册

 浏览型号2N5599的Datasheet PDF文件第2页浏览型号2N5599的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5597 2N5599 2N5601 2N5603  
DESCRIPTION  
·With TO-66 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For high frequency power amplifier ;  
audio power amplifier and drivers.  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-80  
UNIT  
2N5597  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5599/5601  
2N5603  
-100  
-120  
-60  
2N5597  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25ꢀ  
V
2N5599/5601  
2N5603  
-80  
-100  
-5  
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
W
-2  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
20  
150  
Tstg  
-65~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.37  
/W  

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