Datasheet > 2N5583

2N5583

更新时间： 2024-01-02 06:12:21

品牌	Logo	应用领域
SEME-LAB		/
页数	文件大小	规格书
1页	16K
描述
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N5583 技术参数

生命周期：	Obsolete	零件包装代码：	BCY
包装说明：	CYLINDRICAL, O-MBCY-W3	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.75
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	30 V
配置：	SINGLE	最小直流电流增益 (hFE)：	25
JEDEC-95代码：	TO-205AF	JESD-30 代码：	O-MBCY-W3
元件数量：	1	端子数量：	3
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
晶体管元件材料：	SILICON	Base Number Matches：	1

2N5583 数据手册

2N5583

Dimensions in mm (inches).

Bipolar PNP Device in a

8.51 (0.34)

9.40 (0.37)

Hermetically sealed TO39

Metal Package.

7.75 (0.305)

8.51 (0.335)

6.10 (0.240)

6.60 (0.260)

Bipolar PNP Device.

V_CEO= 30V

0.89

(0.035)

max.

12.70

(0.500)

min.

0.41 (0.016)

0.53 (0.021)

dia.

I_C= 0.5A

5.08 (0.200)

typ.

2.54

(0.100)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

0.74 (0.029)

1.14 (0.045)

JANTX, JANTXV and JANS specifications

0.71 (0.028)

0.86 (0.034)

45°

TO39 (TO205AD)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V_CEO*

I_C(CONT)

h_FE

0.5

@ (V_CE/ I_C)

100

f_t

P_D

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Generated

1-Aug-02

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

下载PDF

与2N5583相关器件

型号	品牌	描述	获取价格	数据表
2N5583LP	ETC	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 500MA I(C) \| TO-39	获取价格
2N5584	MICROSEMI	Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal,	获取价格
2N5584E3	MICROSEMI	Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal,	获取价格
2N5587	ETC	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 80A I(C) \| TO-114	获取价格
2N5588	ETC	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 80A I(C) \| TO-114	获取价格
2N5588E3	MICROSEMI	Power Bipolar Transistor, 80A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal,	获取价格