2N5597

更新时间： 2024-11-01 06:18:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	128K
描述
Silicon PNP Power Transistors

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中文翻译

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技术参数
数据手册

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2N5597 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

2N5597 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5597 2N5599 2N5601 2N5603

DESCRIPTION

·With TO-66 package

·Excellent safe operating area

·Low collector saturation voltage

APPLICATIONS

·For high frequency power amplifier ;

audio power amplifier and drivers.

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-80

UNIT

2N5597

V_CBO

Collector-base voltage

Open emitter

2N5599/5601

2N5603

-100

-120

-60

2N5597

V_CEO

Collector-emitter voltage

Open base

Open collector

T_C=25℃

2N5599/5601

2N5603

-80

-100

-5

V_EBO

I_C

Emitter-base voltage

Collector current

-2

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

℃

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

4.37

℃/W

12 3

中文翻译

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与2N5597相关器件

型号	品牌	获取价格	描述	数据表
2N5597E3	MICROSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
2N5598	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5598	JMNIC	获取价格	Silicon NPN Power Transistors
2N5598	ISC	获取价格	Silicon NPN Power Transistors
2N5598	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
2N5598	APITECH	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
2N5598	ASI	获取价格	Transistor
2N5598E3	MICROSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL
2N5599	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO66 Metal Package
2N5599	SAVANTIC	获取价格	Silicon PNP Power Transistors