5秒后页面跳转
2N5597 PDF预览

2N5597

更新时间: 2024-10-31 23:16:11
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
1页 15K
描述
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

2N5597 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.31
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-213AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
Base Number Matches:1

2N5597 数据手册

  
2N5597  
Dimensions in mm (inches).  
Bipolar PNP Device in a  
Hermetically sealed TO66  
Metal Package.  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
3.61 (0.142)  
4.08(0.161)  
rad.  
max.  
Bipolar PNP Device.  
VCEO = 60V  
1
2
IC = 2A  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
JANTX, JANTXV and JANS specifications  
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
TO66 (TO213AA)  
PINOUTS  
1 – Base  
2 – Emitter  
Case – Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
60  
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
2
@ 5/1 (VCE / IC)  
70  
200  
-
ft  
60M  
Hz  
W
PD  
20  
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
1-Aug-02  

与2N5597相关器件

型号 品牌 获取价格 描述 数据表
2N5597E3 MICROSEMI

获取价格

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
2N5598 SAVANTIC

获取价格

Silicon NPN Power Transistors
2N5598 JMNIC

获取价格

Silicon NPN Power Transistors
2N5598 ISC

获取价格

Silicon NPN Power Transistors
2N5598 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
2N5598 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
2N5598 ASI

获取价格

Transistor
2N5598E3 MICROSEMI

获取价格

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL
2N5599 SEME-LAB

获取价格

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package
2N5599 SAVANTIC

获取价格

Silicon PNP Power Transistors