生命周期: | Contact Manufacturer | Reach Compliance Code: | unknown |
风险等级: | 5.6 | 最大集电极电流 (IC): | 4 A |
配置: | Single | 最小直流电流增益 (hFE): | 5 |
最高工作温度: | 175 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 70 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5591/B25-12 | ETC | TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 3A I(C) | SOT-120VAR |
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2N5597 | JMNIC | Silicon PNP Power Transistors |
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2N5597 | MICROSEMI | Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, |
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2N5597 | SEME-LAB | Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
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2N5597 | SAVANTIC | Silicon PNP Power Transistors |
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2N5597 | ISC | Silicon PNP Power Transistors |
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