2N3634UB

更新时间： 2024-01-05 14:21:29

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关
页数	文件大小	规格书
5页	228K
描述
RADIATION HARDENED

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2N3634UB 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-CDSO-N3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.36
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	140 V	配置：	SINGLE
最小直流电流增益 (hFE)：	30	JESD-30 代码：	R-CDSO-N3
元件数量：	1	端子数量：	3
最高工作温度：	200 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.5 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2N3634UB 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PACKAGE DIMENSIONS

Dimensions

Millimeters

Ltr

Inches

Notes

Min

.305

.240

.335

Max

Min

Max

8.51

6.60

9.40

.335

.260

.370

7.75

6.10

8.51

.200 TYP

5.08 TYP

.016

.021

0.41

0.53

See notes 7, 9, and 10

.019

050

0.41

0.48

1.27

.250

.100

6.35

2.54

.050

.010

.045

.034

1.27

0.254

1.14

.029

.028

0.74

0.71

0.86

45° TP

Term 1

Term 2

Term 3

Emitter

Base

Collector

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).

4. TL measured from maximum HD.

5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of

true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by

direct methods or by gauge and gauging procedure.

7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL

minimum.

8. r (radius) applies to both inside corners of tab.

9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)

maximum (TO-39).

10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)

maximum (TO-5).

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1: Physical dimensions (TO-5 and TO-39)

T4-LDS-0065 Rev. 2 (100377)

Page 4 of 5

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