5秒后页面跳转
2N2222 PDF预览

2N2222

更新时间: 2024-11-18 07:28:19
品牌 Logo 应用领域
CENTRAL 晶体晶体管开关
页数 文件大小 规格书
2页 526K
描述
NPN SILICON TRANSISTOR

2N2222 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:0.88
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2N2222 数据手册

 浏览型号2N2222的Datasheet PDF文件第2页 
2N2221  
2N2222  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N2221, 2N2222  
types are silicon NPN epitaxial planar transistors  
designed for small signal, general purpose switching  
applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
60  
30  
CBO  
CEO  
EBO  
V
V
5.0  
I
800  
mA  
mW  
W
C
P
400  
D
D
Power Dissipation (T =25°C)  
C
P
1.2  
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
438  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
146  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=50V  
-
10  
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=50V, T =150°C  
A
=3.0V  
-
-
10  
10  
-
μA  
nA  
V
BV  
BV  
BV  
I =10μA  
60  
30  
5.0  
-
CBO  
C
I =10mA  
-
V
CEO  
C
I =10μA  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
V
C
B
I =150mA, I =15mA  
0.6  
-
V
C
B
I =500mA, I =50mA  
V
C
B
f
V
=20V, I =20mA, f=100MHz  
250  
-
MHz  
pF  
pF  
T
CE  
CB  
EB  
C
C
C
V
V
=10V, I =0, f=100kHz  
8.0  
30  
ob  
ib  
E
=0.5V, I =0, f=100kHz  
-
C
R1 (30-January 2012)  

2N2222 替代型号

型号 品牌 替代类型 描述 数据表
2N2222ALEADFREE CENTRAL

功能相似

暂无描述
2N2222A-BP MCC

功能相似

NPN Switching Transistors

与2N2222相关器件

型号 品牌 获取价格 描述 数据表
2N2222/A ETC

获取价格

NPN Switching Transistors
2N2222A BOCA

获取价格

NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2222A TE

获取价格

Radiation Hardened NPN Silicon Switching Transistors
2N2222A CENTRAL

获取价格

Small Signal Transistors
2N2222A COMSET

获取价格

SILICON PLANAR EPITAXIAL TRANSISTORS
2N2222A SECOS

获取价格

NPN Plastic Encapsulated Transistor
2N2222A NJSEMI

获取价格

NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2222A FAIRCHILD

获取价格

NPN Small Signal General Purpose Amplifiers
2N2222A TGS

获取价格

TO-92 Plastic-Encapsulate Transistors (NPN)
2N2222A SEME-LAB

获取价格

HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR