2N2221
2N2222
www.centralsemi.com
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR 2N2221, 2N2222
types are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
V
V
V
60
30
CBO
CEO
EBO
V
V
5.0
I
800
mA
mW
W
C
P
400
D
D
Power Dissipation (T =25°C)
C
P
1.2
Operating and Storage Junction Temperature
T , T
-65 to +200
438
°C
J
stg
Thermal Resistance
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
Θ
146
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=50V
-
10
nA
CBO
CBO
EBO
CB
CB
EB
=50V, T =150°C
A
=3.0V
-
-
10
10
-
μA
nA
V
BV
BV
BV
I =10μA
60
30
5.0
-
CBO
C
I =10mA
-
V
CEO
C
I =10μA
-
V
EBO
E
V
V
V
V
I =150mA, I =15mA
0.4
1.6
1.3
2.6
-
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
C
B
I =500mA, I =50mA
-
V
C
B
I =150mA, I =15mA
0.6
-
V
C
B
I =500mA, I =50mA
V
C
B
f
V
=20V, I =20mA, f=100MHz
250
-
MHz
pF
pF
T
CE
CB
EB
C
C
C
V
V
=10V, I =0, f=100kHz
8.0
30
ob
ib
E
=0.5V, I =0, f=100kHz
-
C
R1 (30-January 2012)