Datasheet > 2N2222A

2N2222A

更新时间： 2024-11-17 22:44:59

品牌	Logo	应用领域
博卡 - BOCA		晶体开关晶体管 PC 局域网
页数	文件大小	规格书
3页	56K
描述
NPN SILICON PLANAR SWITCHING TRANSISTORS

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数据手册

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2N2222A 数据手册

NPN SILICON PLANAR SWITCHING TRANSISTORS

2N2221A

2N2222A

TO-18

Boca Semiconductor Corp.

BSC

http://www.bocasemi.com

Switching And Linear Application DC And VHF Amplifier Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

2N2221A,22A

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @Ta=25 degC

Derate Above 25deg C

VCEO

VCBO

VEBO

6.0

800

500

2.28

1.2

mW/deg C

@ Tc=25 degC

Derate Above 25deg C

Operating And Storage Junction

Temperature Range

6.85

-65 to +200

mW/deg C

deg C

Tj, Tstg

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

VALUE

MAX

MIN

6.0

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter-Base Voltage

VCEO

VCBO

VEBO

ICBO

IC=10mA,IB=0

IC=10uA.IE=0

IE=10uA, IC=0

VCB=60V, IE=0

Collector-Cut off Current

Ta=150 deg C

VCB=60V, IE=0

VCE=60V, VEB=3V

VEB=3V, IC=0

0.3

ICEX

IEBO

IBL

Emitter-Cut off Current

Base-Cut off Current

Collector Emitter Saturation Voltage

VCE=60V, VEB=3V

VCE(Sat)* IC=150mA,IB=15mA

IC=500mA,IB=50mA

1.0

Base Emitter Saturation Voltage

VBE(Sat) * IC=150mA,IB=15mA

IC=500mA,IB=50mA

0.6-1.2

2.0

http://www.bocasemi.com

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与2N2222A相关器件

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