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2N2222A PDF预览

2N2222A

更新时间: 2024-01-08 06:24:53
品牌 Logo 应用领域
博卡 - BOCA 晶体开关晶体管PC局域网
页数 文件大小 规格书
3页 56K
描述
NPN SILICON PLANAR SWITCHING TRANSISTORS

2N2222A 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.61最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JEDEC-95代码:MO-041BB
JESD-30 代码:R-CDSO-N6元件数量:2
端子数量:6封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2N2222A 数据手册

 浏览型号2N2222A的Datasheet PDF文件第2页浏览型号2N2222A的Datasheet PDF文件第3页 
NPN SILICON PLANAR SWITCHING TRANSISTORS  
2N2221A  
2N2222A  
TO-18  
Boca Semiconductor Corp.  
BSC  
http://www.bocasemi.com  
Switching And Linear Application DC And VHF Amplifier Applications  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
2N2221A,22A  
UNIT  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
Power Dissipation @Ta=25 degC  
Derate Above 25deg C  
40  
75  
6.0  
800  
500  
V
V
V
mA  
mW  
2.28  
1.2  
mW/deg C  
W
@ Tc=25 degC  
Derate Above 25deg C  
Operating And Storage Junction  
Temperature Range  
6.85  
-65 to +200  
mW/deg C  
deg C  
Tj, Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
VALUE  
MAX  
MIN  
40  
75  
6.0  
-
UNIT  
V
V
V
nA  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter-Base Voltage  
VCEO  
VCBO  
VEBO  
ICBO  
IC=10mA,IB=0  
IC=10uA.IE=0  
IE=10uA, IC=0  
VCB=60V, IE=0  
-
-
-
Collector-Cut off Current  
10  
Ta=150 deg C  
VCB=60V, IE=0  
VCE=60V, VEB=3V  
VEB=3V, IC=0  
-
-
-
-
-
10  
10  
10  
20  
0.3  
uA  
nA  
nA  
nA  
V
ICEX  
IEBO  
IBL  
Emitter-Cut off Current  
Base-Cut off Current  
Collector Emitter Saturation Voltage  
VCE=60V, VEB=3V  
VCE(Sat)* IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
1.0  
V
Base Emitter Saturation Voltage  
VBE(Sat) * IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
-
-
0.6-1.2  
2.0  
V
V
http://www.bocasemi.com  
page : 1  

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