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2N2222A PDF预览

2N2222A

更新时间: 2024-02-04 14:05:41
品牌 Logo 应用领域
COMSET 晶体晶体管开关PC局域网
页数 文件大小 规格书
3页 153K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

2N2222A 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-CDSO-N6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.61最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JEDEC-95代码:MO-041BB
JESD-30 代码:R-CDSO-N6元件数量:2
端子数量:6封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2N2222A 数据手册

 浏览型号2N2222A的Datasheet PDF文件第2页浏览型号2N2222A的Datasheet PDF文件第3页 
PNP 2N2907 – 2N2907A  
NPN 2N2222 – 2N2222A  
SILICON PLANAR EPITAXIAL TRANSISTORS  
The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector  
connected to the case .  
They are primarily intended for high speed switching.  
NPN complements are 2N2222 and 2N2222A .  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N2907A  
2N2907  
2N2907A  
2N2907  
-60  
-40  
-60  
-60  
-5  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCEO  
V
VCBO  
V
2N2907A  
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
V
2N2907  
2N2907A  
2N2907  
2N2907A  
2N2907  
2N2907A  
2N2907  
-5  
-600  
0.4  
mA  
Total Power Dissipation  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
@ Tcase= 25°  
PD  
PD  
TJ  
Watts  
Watts  
°C  
1.8  
2N2907A  
200  
2N2907  
2N2907A  
2N2907  
Storage Temperature range  
TStg  
-65 to +200  
°C  
(1) Applicable up to IC = 500mA  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to ambient in  
free air  
2N2907A  
2N2907  
2N2907A  
2N2907  
RthJ-a  
RthJ-c  
350  
K/W  
Thermal Resistance, Junction to case  
146  
K/W  
COMSET SEMICONDUCTORS  
1/3  

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