Datasheet > 2N2222A

2N2222A

更新时间： 2024-11-21 07:28:19

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页数	文件大小	规格书
2页	102K
描述
TO-92 Plastic-Encapsulate Transistors (NPN)

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数据手册

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2N2222A 数据手册

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

2N2222A TRANSISTOR (NPN )

1. EMITTER

2. BASE

FEATURE

Complementary NPN Type available (MPS2222)

3. COLLECTOR

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

1 2 3

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

600

625

150

-55-150

℃

P_C

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 10uA , I_E=0

MIN

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10mA , I_B=0

I_E= 10uA, I_C=0

V_CB= 60V, I_E=0

Collector cut-off current

I_CEX

V_CE= 60V,V_EB(Off)=3V

V_EB= 3 V, I_C=0

Emitter cut-off current

I_EBO

100

300

h_FE(1)

V_CE=10V,I_C= 150mA

V_CE=10V,I_C= 0.1mA

V_CE=10V, I_C= 500mA

I_C= 500mA, I_B=50mA

I_C= 150mA, I_B=15mA

I_C= 500mA, I_B= 50mA

V_CC=30V, V_EB(Off)=-0.5V,

I_C=150mA,I_B1=15mA

100

DC current gain

h_FE(2)

h_FE(3)

V_CE(sat)(1)

V_CE(sat)(2)

0.6

0.3

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Delay time

V_BE(sat)

t_d

t_r

MHz

Rise time

225

Storage time

t_S

t_f

_CC=30V,Ic=150mA,I_B1=I_B2=15mA

_CE=20V, I_C=20mA, f=100MHz

Fall time

Transition frequency

^*pulse test

300

f_T

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

200-300

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