Datasheet > 2N2222A

2N2222A

更新时间： 2024-11-22 14:53:43

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	373K
描述
小信号晶体管

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2N2222A 数据手册

2N2222 / 2N2222A

NPN Silicon Epitaxial Planar Transistor

Features

•

On special request, these transistors can be

manufactured in different pin configurations.

• Low Collector Emitter Saturation Voltage

Applications

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package

• Switching and AF Amplifier applications.

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

Value

Unit

Collector Base Voltage

2N2222

2N2222A

2N2222

2N2222A

2N2222

2N2222A

Collector Emitter Voltage

Emitter Base Voltage

V_CEO

V_EBO

Collector Current

I_C

P_tot

T_j

600

625

℃

Power Dissipation

Junction Temperature

Storage Temperature Range

150

T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

200

Unit

Thermal Resistance from Junction to Ambient

℃

1 / 5

Dated : 28/06/2022 Rev:04

12 3 4 5

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