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2N2222A PDF预览

2N2222A

更新时间: 2024-11-20 22:44:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管PC
页数 文件大小 规格书
8页 76K
描述
HIGH SPEED SWITCHES

2N2222A 数据手册

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2N2219A  
2N2222A  
HIGH SPEED SWITCHES  
DESCRIPTION  
The 2N2219A and 2N2222A are silicon planar  
epitaxial NPN transistors in Jedec TO-39 (for  
2N2219A) and in Jedec TO-18 (for 2N2222A)  
metal case. They are designed for high speed  
switching application at collector current up to  
500mA, and feature useful current gain over a  
wide range of collector current, low leakage  
currents and low saturation voltage.  
2N2219A approved to CECC 50002-100,  
2N2222A approved to CECC 50002-101  
available on request.  
TO-18  
TO-39  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
75  
Unit  
V
V
V
A
40  
6
0.8  
o
Ptot  
Total Dissipation at Tamb 25 C  
for 2N2219A  
for 2N2222A  
0.8  
0.5  
W
W
o
at Tcase 25 C  
2N2219A  
for  
for 2N2222A  
3
1.8  
W
W
Tstg  
Tj  
Storage Temperature  
Max. Operating Junction Temperature  
-65 to 200  
175  
oC  
oC  
1/8  
June 1999  

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