Datasheet > 2N2222A

2N2222A

更新时间： 2024-11-22 02:55:43

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描述
Radiation Hardened NPN Silicon Switching Transistors

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数据手册

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2N2222A 数据手册

2N2221A, L, UA, UB &

2N2222A, L, UA, UB

Radiation Hardened NPN Silicon Switching Transistors

Rev. V1

Features



Qualified to MIL-PRF-19500/255

Levels

JANSM-3K Rads (Si) JAN

JANSD-10K Rads (Si) JANTX

JANSP-30K Rads (Si) JANTXV

JANSL-50K Rads (Si) JAN

JANSR-100K Rads (Si)



TO-18 (TO-206AA), Surface mount UA & UB

Packages

Applications



Switching and Linear Applications

DC and VHF Amplifier Applications

Electrical Specifications @ T_A= 25°C

Parameter

Test Conditions

Symbol Units Minimum Maximum

Off Characteristics:

Collector - Emitter Breakdown

I_C= 10 mAdc

V_(BR)CEOVdc

—

V_CB= 75 Vdc

V_CB= 60 Vdc

I_CBO1

I_CBO2

µAdc

nAdc

Collector - Base Cutoff Current

Emitter - Base Cutoff Current

—

V_EB= 6.0 Vdc

V_EB= 4.0 Vdc

I_EBO1

I_EBO2

µAdc

nAdc

—

Collector - Emitter Cutoff Current

V_CE= 50 Vdc

I_CES

nAdc

On Characteristics¹:

2N2221A, L, UA, UB

I_C= 0.1 mAdc, V_CE= 10 Vdc

I_C= 1.0 mAdc, V_CE= 10 Vdc

I_C= 10.0 mAdc, V_CE= 10 Vdc

I_C= 150.0 mAdc, V_CE= 10 Vdc

I_C= 500.0 mAdc, V_CE= 10 Vdc

—

150

—

120

—

Forward Current Transfer Ratio

hFE

2N2222A, L, UA, UB

I_C= 0.1 mAdc, V_CE= 10 Vdc

I_C= 1.0 mAdc, V_CE= 10 Vdc

I_C= 10.0 mAdc, V_CE= 10 Vdc

I_C= 150.0 mAdc, V_CE= 10 Vdc

I_C= 500.0 mAdc, V_CE= 10 Vdc

100

—

325

120

—

I_C= 150 mAdc, I_B= 15 mAdc

I_C= 500 mAdc, I_B= 50 mAdc

0.3

1.0

Collector - Base Cutoff Current

Base - Emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

Vdc

—

I_C= 150 mAdc, I_B= 15 mAdc

I_C= 500 mAdc, I_B= 50 mAdc

0.6

—

1.2

2.0

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.

(Continued next page)

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与2N2222A相关器件

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2N2222A/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
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2N2222AB-1	MICROSEMI	获取价格	SWITCHING TRANSISTOR NPN SILICON
2N2222ABC	MICROSEMI	获取价格	SWITCHING TRANSISTOR NPN SILICON
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