Datasheet > 2N2222A-B

2N2222A-B

更新时间： 2024-02-16 07:03:47

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美微科 - MCC		/
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3页	84K
描述
Transistor

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技术参数
数据手册

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2N2222A-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2N2222A-B 数据手册

M C C

2N2222

2N2222A

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Micro Commercial Components

Features

•

High current (max.800mA)

Low voltage (max.40V)

NPN Switching

Transistors

Maximum Ratings

Symbol

Rating

Unit

V_CEO

V_CBO

V_EBO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

TO-18

2N2222

2N2222A

2N2222

2N2222A

2N2222

2N2222A

5.0

6.0

I_C

I_CM

I_BM

T_J

Collector Current (DC)

Peak Collector Current

Peak Base Current

Operating Junction Temperature

Storage Temperature

800

200

^OC

-55 to +150

T_STG

^OC

Thermal Characteristics

Symbol

Rating

Max

Unit

Total power Dissipation

T_A!25R

T_C!25R

P_tot

500

1.2

R_JC

R_JA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Electrical Characteristics @ 25 C Unless Otherwise Specified

146

350

K/W

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

Collector cut-off current

(V_CB=50Vdc, I_E=0)

(V_CB=50Vdc, I_E=0,T_A=150R)

(V_CB=60Vdc, I_E=0)

(V_CB=60Vdc, I_E=0,T_A=150R)

2N2222

---

nAdc

uAdc

nAdc

uAdc

nAdc

I_CBO

2N2222A

DIMENSIONS

INCHES

Emitter Cut-off current

(I_C=0, V_EB=3Vdc)

DIM

MIN

MAX

.230

.195

.210

----

MIN

MAX

NOTE

I_EBO

.209

.178

.170

.50

5.309 5.842

4.521 4.953

4.318 5.334

DC Current Gain

(I_C=0.1mAdc, V_CE=10Vdc)

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

(I_C=150mAdc, V_CE=1.0Vdc)*

(I_C=150mAdc, V_CE=10Vdc)*

DC Current Gain

100

h_FE

12.7

----

.100

2.54

.7112 1.219

----- 1.27

0.229 0.787

44° 46°

ΦTYP

.028

-----

.009

44°

.048

.050

.031

46°

300

h_FE

(I_C=500mAdc, V_CE=10Vdc) *

2N2222

2N2222A

---

.036

.016

.046

.021

0.914 1.168

0.406 0.533

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