Datasheet > 2N2222ABC-1

2N2222ABC-1

更新时间： 2024-11-17 22:35:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
2页	48K
描述
SWITCHING TRANSISTOR NPN SILICON

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数据手册

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2N2222ABC-1 数据手册

2N2222A DIE

Phone: 617-924-9280

Fax: 617-924-1235

A Microsemi Company

580 Pleasant St.

Watertown, MA 02172

DIE SPECIFICATION

SWITCHING TRANSISTOR

NPN SILICON

FEATURES:

n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255

n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS

n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS

n LOW VCE(sat): .3V @ IC = 150 mAdc

PHYSICAL DIMENSIONS

Absolute Maximum Ratings:

Symbol Parameter

Limit

Unit

Vceo

Vcbo

Vebo

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

800

Vdc

mAdc

Collector Current- Continuous

Tj, Tstg Operating Junction & Storage

Temperature Range

-65 to +200 °C

Packaging Options:

Processing Options:

W: Wafer (100% probed) U: Wafer (sample probed)

Standard: Capable of JANTXV applications (No Suffix)

Suffix C: Commercial

D: Chip (Waffle Pack)

B: Chip (Vial)

V: Chip (Waffle Pack, 100% visually inspected) X: Other Suffix S: Capable of S-Level equivalent applications

ORDERING INFORMATION:

PART #: 2N2222A_ _ - _

Metallization Options:

Standard: Al Top

/ Au Backside (No Dash #)

/ TiPdAg Backside

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option

Dash 1:

Al Top

Sertech reserves the right to make changes to any product design, specification, or other information at any time without

prior notice.

Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98

MSC0949.PDF

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