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1SS193-TP PDF预览

1SS193-TP

更新时间: 2024-11-18 21:18:31
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 540K
描述
Rectifier Diode, 1 Element, 0.1A, Silicon, LEAD FREE, PLASTIC PACKAGE-3

1SS193-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.14配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
认证状态:Not Qualified最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1SS193-TP 数据手册

 浏览型号1SS193-TP的Datasheet PDF文件第2页浏览型号1SS193-TP的Datasheet PDF文件第3页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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Micro Commercial Components  
1SS193  
Features  
·
·
x
Low Leakage Current  
Surface Mount SOT-23 Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Marking Code : F3  
Halogen free available upon request by adding suffix "-HF"  
150mW  
Switching Diodes  
SOT-23  
Maximum Ratings  
A
D
B
C
Reverse Voltage  
Forward Current  
VR  
IF  
PD  
Tstg  
80V  
100mA  
F
E
Power Dissipation @ TA=25OC  
Storage Temperature Range  
Junction Temperature  
150mW  
-55OC to +150OC  
150OC  
G
H
J
T
j
DIMENSIONS  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
INCHES  
MM  
DIM  
A
B
C
D
E
MIN  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
MAX  
.120  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
Reverse Voltage  
VR  
80V  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
Minimum Reverse  
Breakdown Voltage  
V(BR)  
80V  
IR=100uA  
TA = 25OC  
TA= 25OC  
F
Maximum Forward  
Voltage  
G
H
J
VF  
IR  
1.2V  
IF = 100mA;  
.085  
.37  
MaximumReverse  
Voltage Leakage  
Current  
K
0.5uA  
VR=80Volts  
TA = 25OC  
Suggested Solder  
Pad Layout  
.031  
.800  
Maximum Diode  
Capacitance  
CD  
trr  
3.0pF  
4.0ns  
Measured at  
f=1.0MHz,  
VR=0  
.035  
.900  
.079  
2.000  
inches  
mm  
Maximum Reverse  
Recovery Time  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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