1SS196

更新时间： 2024-11-18 07:23:47

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
3页	523K
描述
150mW Switching Diodes

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中文翻译

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数据手册

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1SS196 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

1SS196

Features

•

Low Leakage Current

Surface Mount SOT-23 Package

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Marking Code : G3

150mW

Switching Diodes

SOT-23

Maximum Ratings

Reverse Voltage

Forward Current

V_R

I_F

P_D

T_stg

80V

100mA

Power Dissipation @ T_A=25^OC

Storage Temperature Range

Junction Temperature

150mW

-55^OC to +150^OC

150^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

DIMENSIONS

Reverse Voltage

V_R

80V

INCHES

DIM

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MAX

.120

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Minimum Reverse

Breakdown Voltage

V_(BR)

80V

I_R=100uA

T_A= 25^OC

.098

.055

.041

.081

.024

.0039

.044

.007

.020

Maximum Forward

Voltage

MaximumReverse

Voltage Leakage

Current

V_F

I_R

1.2V

I_F= 100mA;

0.5uA

V_R=80Volts

T_A= 25^OC

.085

.37

Suggested Solder

Pad Layout

.031

.800

Maximum Diode

Capacitance

C_D

t_rr

3.0pF

4.0ns

Measured at

f=1.0MHz,

V_R=0

.035

.900

Maximum Reverse

Recovery Time

.079

2.000

inches

.037

.950

.037

.950

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

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