Datasheet > 1SS196(TE85L,F)

1SS196(TE85L,F)

更新时间： 2024-02-03 07:45:45

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	315K
描述
RECTIFIER DIODE,85V V(RRM),SOT-23

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技术参数
数据手册

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1SS196(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	1.72
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	最大非重复峰值正向电流：	2 A
元件数量：	1	最高工作温度：	125 °C
最大输出电流：	0.1 A	最大重复峰值反向电压：	85 V
最大反向恢复时间：	0.004 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

1SS196(TE85L,F) 数据手册

1SS196

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS196

Unit: mm

Ultra High-Speed Switching Applications

 AEC-Q101 Qualified (Note1)

 Small package: SC-59

 Low forward voltage: V

= 0.90 V (typ.)

F (3)

 Fast reverse recovery time: t = 1.6 ns (typ.)

 Small total capacitance: C = 0.9 pF (typ.)

Note1: For detail information, please contact to our sales.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

150

°C

JEDEC

TO-236MOD

JEITA

SC-59

Junction temperature

125

TOSHIBA

2-3F1S

Storage temperature range

stg

−55 to 125

Weight: 12 mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 1 mA

Min

Typ.

Max

Unit

―

0.60

0.72

0.90

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10 mA

= 100 mA

1.20

0.1

0.5

3.0

4.0

= 30 V

Reverse current

μA

= 80 V

―

Total capacitance

= 0 V, f = 1 MHz

0.9

1.6

Reverse recovery time

= 10 mA (Fig.1)

Start of commercial production

1982-05

207-11-02

12 3 4

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