5秒后页面跳转
1SS196-TP-HF PDF预览

1SS196-TP-HF

更新时间: 2024-11-18 13:03:47
品牌 Logo 应用领域
美微科 - MCC 二极管开关
页数 文件大小 规格书
3页 523K
描述
Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

1SS196-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.67配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
最大重复峰值反向电压:80 V最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1SS196-TP-HF 数据手册

 浏览型号1SS196-TP-HF的Datasheet PDF文件第2页浏览型号1SS196-TP-HF的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
1SS196  
Features  
·
·
x
Low Leakage Current  
Surface Mount SOT-23 Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Marking Code : G3  
150mW  
Switching Diodes  
SOT-23  
Maximum Ratings  
A
D
Reverse Voltage  
Forward Current  
VR  
IF  
PD  
Tstg  
80V  
100mA  
B
C
Power Dissipation @ TA=25OC  
Storage Temperature Range  
Junction Temperature  
150mW  
-55OC to +150OC  
150OC  
F
E
T
j
G
H
J
K
Electrical Characteristics @ 25OC Unless Otherwise Specified  
DIMENSIONS  
Reverse Voltage  
VR  
80V  
INCHES  
MM  
DIM  
A
B
C
D
E
MIN  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
MAX  
.120  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
Minimum Reverse  
Breakdown Voltage  
V(BR)  
80V  
IR=100uA  
TA = 25OC  
TA= 25OC  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
Maximum Forward  
Voltage  
MaximumReverse  
Voltage Leakage  
Current  
VF  
IR  
1.2V  
IF = 100mA;  
F
G
H
J
0.5uA  
VR=80Volts  
TA = 25OC  
.085  
.37  
K
Suggested Solder  
Pad Layout  
.031  
.800  
Maximum Diode  
Capacitance  
CD  
trr  
3.0pF  
4.0ns  
Measured at  
f=1.0MHz,  
VR=0  
.035  
.900  
Maximum Reverse  
Recovery Time  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

与1SS196-TP-HF相关器件

型号 品牌 获取价格 描述 数据表
1SS198 RENESAS

获取价格

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS198 HITACHI

获取价格

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
1SS198 EIC

获取价格

Schottky Barrier Rectifiers
1SS198RY RENESAS

获取价格

暂无描述
1SS198TA RENESAS

获取价格

Mixer Diode, Silicon, DO-34
1SS198TAX RENESAS

获取价格

SILICON, MIXER DIODE, DO-34
1SS198TD HITACHI

获取价格

Mixer Diode, Silicon, DO-34
1SS198TD RENESAS

获取价格

SILICON, MIXER DIODE, DO-34
1SS198TDX HITACHI

获取价格

Mixer Diode, Silicon, DO-34
1SS198TDX RENESAS

获取价格

暂无描述