Datasheet > 1SS200_07

1SS200_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	196K
描述
Ultra High Speed Switching Application

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1SS200_07 数据手册

1SS200

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS200

Unit: mm

Ultra High Speed Switching Application

z Low forward voltage

: V

= 0.92V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 (*)

100 (*)

2 (*)

FSM

Power dissipation

200

°C

Junction temperature

125

JEDEC

―

Storage temperature range

−55~125

stg

EIAJ

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

Weight: 0.13g

1-4E2B

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(*) Unit Rating. Total Rating = Unit Rating × 1.5.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 10mA

―

= 100mA

1.20

0.1

0.5

4.0

―

= 30V

Reverse current

μA

―

= 80V

―

Total capacitance

―

= 0, f = 1MHz

2.2

1.6

Reverse recovery time

―

I = 10mA (Fig.1)

2007-11-01

12 3

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