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1SS222 PDF预览

1SS222

更新时间: 2024-01-09 16:30:43
品牌 Logo 应用领域
科信 - KEXIN 二极管开关光电二极管
页数 文件大小 规格书
1页 37K
描述
SILICON SWITCHING DIODE

1SS222 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.45配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e6元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:0.003 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Bismuth (Sn98Bi2)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1SS222 数据手册

  
SMD Type  
Diodes  
SILICON SWITCHING DIODE  
1SS222  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low capacitance:Ct = 4.0 pF MAX.  
1
2
High speed switching: trr = 3.0 ns MAX.  
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Wide applications including switching, limitter clipper.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Peak Reverse Voltage  
DC Reverse Voltage  
Symbol  
VRM  
VR  
Rating  
70  
Unit  
V
70  
V
Peak Forward Current  
Average Rectified Current  
DC Forward Current  
IFM  
IO  
300  
mA  
mA  
mW  
100  
P
100  
Junction Temperature  
Storage Temperature Range  
Junction to Ambient  
Tj  
150  
Tstg  
R
-55 to + 150  
0.67  
/mW  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
720  
850  
950  
Max  
850  
1000  
1200  
1.0  
Unit  
IF = 10 mA  
IF = 50 mA  
Continuous reverse voltage  
VF  
mV  
IF = 100 mA  
Reverse current  
capacitance  
IR  
Ct  
trr  
VR = 70 V  
A
pF  
ns  
VR = 0, f = 1.0 MHz  
IF = 10 mA,VR = 6 V, RL = 100  
2.0  
4.0  
Reverse recovery time  
3.0  
Marking  
Marking  
A7  
1
www.kexin.com.cn  

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