是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.5 | Is Samacsys: | N |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 265 |
最大功率耗散: | 0.15 W | 认证状态: | Not Qualified |
最大反向恢复时间: | 0.004 µs | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1SS196(TE85L,F) | TOSHIBA |
获取价格 |
RECTIFIER DIODE,85V V(RRM),SOT-23 | |
1SS196_07 | TOSHIBA |
获取价格 |
Ultra High Speed Switching Application | |
1SS196_13 | MCC |
获取价格 |
150mW Switching Diodes | |
1SS196-T | RECTRON |
获取价格 |
暂无描述 | |
1SS196TE85R2 | TOSHIBA |
获取价格 |
DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | |
1SS196-TP | MCC |
获取价格 |
Rectifier Diode, 1 Element, 0.1A, Silicon, LEAD FREE, PLASTIC PACKAGE-3 | |
1SS196-TP-HF | MCC |
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Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon, HALOGEN AND LEAD FREE, PLASTIC PACK | |
1SS198 | RENESAS |
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Silicon Schottky Barrier Diode for Various Detector, High Speed Switching | |
1SS198 | HITACHI |
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Silicon Schottky Barrier Diode for Various Detector, High Speed Switching | |
1SS198 | EIC |
获取价格 |
Schottky Barrier Rectifiers |