Datasheet > 1SS196

1SS196

更新时间： 2024-11-21 12:25:35

品牌	Logo	应用领域
KISEMICONDUCTOR		二极管
页数	文件大小	规格书
1页	60K
描述
SOT-23 Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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1SS196 数据手册

KI SEMICONDUCTOR CO.

SOT-23 Plastic-Encapsulate Diodes

1SS196

SWITCHING DIODE

FEATURES

SOT-23

Power dissipation

P_D

150 mW(Tamb=25℃)

Forward Current

I_F

100 m A

2. 4

1. 3

Reverse Voltage

V_R:

Operating and storage junction temperature range

T_J,T_stg: -55℃ to +150℃

Unit: mm

Marking G3

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Symbol

V_(BR)

I_R

Test conditions

I_R= 100µA

MIN

MAX

UNIT

Parameter

Reverse breakdown voltage

Reverse voltage

leakage current

V_R=80V

0.5

1.2

µA

Forward

Diode

voltage

V_F

C_D

t _{r r}

I_F=100mA

capacitance

V_R=0V

f=1MHz

Reverse recovery time

中文翻译

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