Datasheet > 1N60L-TND-R

1N60L-TND-R

更新时间： 2024-09-14 01:04:51

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1N60L-TND-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

1N60

Power MOSFET

1.2A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 1N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.



FEATURES

* R_DS(ON)<11.5Ω@ V_GS=10V, I_D=0.6A

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (C_RSS= typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

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