Datasheet > 1N60P

1N60P

更新时间： 2024-11-18 06:17:59

品牌	Logo	应用领域
顺烨 - SHUNYE		小信号肖特基二极管
页数	文件大小	规格书
2页	1011K
描述
SMALL SIGNAL SCHOTTKY DIODES

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中文翻译

获取价格

数据手册

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1N60P 数据手册

1N60 THRU 1N60P

SMALL SIGNAL SCHOTTKY DIODES

Reverse Voltage - 40 to 45 Volts Forward Current - 0.03/0.05 Amperes

FEATURES

DO-35(GLASS)

Fast switching for high efficiency

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed

1.0 2(26.0)

MIN.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.079(2.0)

MAX

0.165 (4.2)

MAX

MECHANICAL DATA

Case: DO-35 glass case

1.0 2(26.0)

MIN.

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.018(0.45)

TYP

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.005 ounce, 0.14 grams

Dimensions in inches and (millimeters)

ABSOLUTE RATINGS

Value

SYMBOLS

Parameters

UNITS

1N60P

1N60

V^RRM

I^F

Repetitive peak reverse voltage

Forward continuous current TA=25 C

500

I^FSM

Peak forward surge current(t=1s)

150

T^J,T^STG

T^L

-65 to +125

230

Storage and junction temperature range

Maximum lead tenperature for soldering during 10s at 4mm from case

ELECTRICAL CHARACTERISTICS

Value

SYMBOLS

Test conditions

Parameters

UNITS

Min.

Typ.

0.32

0.24

0.65

0.1

Max.

0.5

1.0

0.5

1.0

1N60

I^F=1mA

1N60P

1N60

V^F

Forward voltage

Reverse current

I^F=30mA

I^F=200mA

1N60P

1N60

I^R

_VR=15V

1N60P

1N60

0.5

V^R=1V f=1MHz

V^R=10V f=1MHz

2.0

C^J

Junction capacitance

1N60P

6.0

trr

Detection efficiency

Reverse recovery time

V^I=3V f =30MHz C^L=10pF R^L=3.8KΩ

I^F=I^R=10mA Irr=1mA R^C=100

Ω

Rθ^JA

Thermal resistance, junction to ambient

C/W

400

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中文翻译

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