Datasheet > 1N60P

1N60P

更新时间： 2024-11-18 06:24:39

品牌	Logo	应用领域
DCCOM		小信号肖特基二极管
页数	文件大小	规格书
2页	62K
描述
TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES

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1N60P 数据手册

DC COMPONENTS CO., LTD.

1N60P

RECTIFIER SPECIALISTS

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES

FEATURES

* Metal silicon junction, majority carrier conduction.

* High current capability, low forward voltage drop.

* Extremely low reverse current I^R

DO-35

* Ultra speed switching characteristics

* Small temperature coefficient of forward characteristics

* Satisfactory Wave detection efficiency

* For use in RECORDER, TV, RADIO, TELEPHONE as

detectors, super high speed switching circuits, small

current rectifier

.020

TYP.

(0.52)

1.0(25.4)

MIN.

MECHANICAL DATA

.165(4.2)

MAX.

* Case: DO-35 glass case

* Polarity: color band denotes cathode end

* Weight: 0.13 grams approx.

.079

(2.0)

MAX.

1.0(25.4)

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

ABSOLUTE RATINGS(LIMITING VALUES)

PARAMETERS

SYMBOL

VALUE

UNITS

ZeneRepetitive Peak Reverse Voltage

V_RRM

I^F

Volts

T_A=25^oC

Forward Continuous Current

Peak Forward Surge Current(t=1S)

I^FSM

500

^oC

Storage and junction Temperature Range

T_STG

-65 to +125

230

Maximum Lead Temperature for Soldering during 10S at 4mm from Case

T_L

ELECTRICAL CHARACTERISTICS

VALUE

PARAMETERS

TEST CONDITIONS

SYMBOL

V_F

UNITS

Volts

TYP.

0.24

0.65

0.5

MAX.

I^F=1mA

0.5

1.0

Forward Voltage

I^F=200mA

V^R=15V

Reverse Current

I^R

C_J

µA

Junction Capacitance

Detection Efficiency

V^R=10V

V^I=3V f=30MHz C^L=10pF R_L=3.8KΩ

I^F=I_R=1mA I^rr=1mA

R_C=100Ω

f=1MHz

6.0

Reverse Recovey time

t_rr

^oC/W

Junction Ambient Thermal Resistance

400

RθJ A

中文翻译

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