Datasheet > 1N60-TB

1N60-TB

更新时间： 2023-12-06 20:09:08

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友顺 - UTC		/
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1N60-TB 数据手册

UNISONIC TECHNOLOGIES CO., LTD

1N60-TB

Preliminary

Power MOSFET

1.0A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 1N60-TB is a high voltage MOSFET and is designed

to have better characteristics, such as fast switching time, low

gate charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient AC to DC converters and bridge circuits.



FEATURES

* R_DS(ON)≤ 8.0 Ω @ V_GS=10V, I_D=0.5A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

1N60L-AA3-R

Halogen Free

1N60G-AA3-R

1N60G-T92-B

1N60G-T92-K

SOT-223

TO-92

Tape Reel

Tape Box

Bulk

1N60L-T92-B

1N60L-T92-K

TO-92

Note: Pin Assignment: G: Gate

D: Drain

S: Source

www.unisonic.com.tw

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