Datasheet > 1N60PWS

1N60PWS

更新时间： 2023-12-06 20:09:35

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	152K
描述
肖特基二极管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N60PWS 数据手册

1N60PWS

Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• High reliability

Anode

• Low forward voltage and reverse current

Top View

Simplified outline SOD-323 and symbol

Applications

• For electronic calculator, etc.

• Low current rectification and high speed switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

Average Forward Rectified Current

I_F(AV)

℃

Peak Forward Current

Surge Forward Current

Junction Temperature

Storage Temperature Range

I_FM

I_surge

T_j

150

500

125

℃

T_Stg

- 55 to + 125

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Current

at V_F= 1 V

I_F

Forward Voltage

at I_F= 1 mA

at I_F= 5 mA

V_F

0.5

0.7

Reverse Current

at V_R= 10 V

I_R

µA

Rectification Efficiency

at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz

1 / 3

Dated: 04/08/2023 Rev: 03

12 3

下载PDF

与1N60PWS相关器件

型号	品牌	描述	获取价格	数据表
1N60Q-TA	UTC	N-CH	获取价格
1N60S	SEMTECH	POINT CONTACT GERMANIUM DIODE	获取价格
1N60S	NJSEMI	Diode 45V 0.15A 2-Pin DO-7	获取价格
1N60S4B	NJSEMI	400 mW low voltage avalanche low noise silicon zener diodes	获取价格
1N60SSB	NJSEMI	400 mW low voltage avalanche low noise silicon zener diodes	获取价格
1N60SW	SEMTECH	Schottky Barrier Diode	获取价格