Datasheet > 1N60SW

1N60SW

更新时间： 2024-11-18 06:17:07

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管
页数	文件大小	规格书
3页	233K
描述
Schottky Barrier Diode

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数据手册

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1N60SW 数据手册

1N60PW, 1N60SW

Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

FEATURES

Anode

• High reliability

• Low forward voltage and reverse current

Top View

Marking Code: 1N60PW: "FM"

1N60SW: "FN"

Simplified outline SOD-123 and symbol

APPLICATIONS

• For electronic calculator, etc.

• Low current rectification and high speed switching

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

V_R

Value

Unit

Peak Reverse Voltage

Reverse Voltage

Peak Forward Current

I_FM

150

Average Rectified Output Current

Surge Forward Current

Junction Temperature

I_O

I_surge

T_j

500

125

Storage Temperature Range

T_S

-55 to +125

Characteristics (T_a= 25 C)

Parameter

Symbol

Min.

Max.

Unit

Forward Current

at V_F= 1 V

I_F

µA

Reverse Current

at V_R= 10 V

I_R

1N60PW

1N60SW

100

Reverse Voltage

V_R

C_J

at I_R= 100 µA

Junction Capacitance

at f = 1 MHz, V = -1 V

Rectification efficiency

at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz

Pair Δ I_F≤ 6 mA at 1V, Δ I_R≤ 20 µA at 10 V

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 07/04/2006

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