Datasheet > 1N6101

1N6101

更新时间： 2024-11-18 18:09:31

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SENSITRON		/
页数	文件大小	规格书
2页	118K
描述
DIODE ARRAY

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获取价格

数据手册

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1N6101 数据手册

1N6101

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4251, REV. -

Isolated Diode Array

Applications:

 High Frequency Data Lines

 RS-323 & RS-432 Networks

 LAN, Ethernet, I/O Ports

 IEC61000-4 compatible for ESD / EFT / Surge

Features:



Protects up to 8 I/O Ports



Isolated diodes eliminate crosstalk

High Density Packaging

High Breakdown Voltage; High Speed Switching (< 10 nsec)

Low Capacitance; Low Leakage

Hermetic Ceramic package

TX, TXV, S level screening available

Maximum Ratings:

All ratings are at 25^oC unless otherwise noted

Characteristics

Reverse Breakdown Voltage

Symbol

Condition

Per diode, Pulsed: PW = 100ms

max.; duty cycle < 20%

Per diode, Derate at 2.4mA/°C

above +25 °C

Max.

Units

Vdc

V_BR

Continuous Forward Current

I_O

300

Peak Surge Current

Power Dissipation

I_FSM

P_D

Per diode, tp= 1/120 s

Per Junction, Derate at

4.0mW/°C above +25 °C

Per Package, Derate at

4.8 mW/^oC above 25 ^oC

500

400

Power Dissipation

P_D

600

Max. Operating Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +150

-65 to +200

C

Electrical Characteristics:

All ratings are per diode and at 25 ^oC unless otherwise noted

Characteristics

Symbol

Condition

Max.

Units

Pulsed: PW = 300us +/- 50us,

duty cycle < 2%, 90us after

leading edge, If = 100mAdc

V_F1

1.00

Max. Forward Voltage Drop

Max Forward Voltage Match

Max. Reverse Current

V_F5

If = 10mAdc

I_R1

I_R2

@V_R= 40V

@V_R= 20V

0.1

µA

Max. Capacitance

(Pin to Pin)

Max. Forward Recovery

Time

Max. Reverse Recovery

Time

C_T

T_FR

T_RR

@V_R= 0V, F=1MHz

I_F= 100mA

4.0

If = IR = 100mAdc, irr = 1mAdc,

RL = 100 ohms

Phone (631) 586 7600  Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com

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