1N6101
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 16-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the
positive side of the power supply line or to ground (see figure 1). An external TVS diode
may be added between the positive supply line and ground to prevent overvoltage on
the supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
16-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
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Hermetic Ceramic Package
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High Frequency Data Lines
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 75 V at 5 µA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6101 for a JANTX screen.
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
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Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
600 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +200oC
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16-PIN Ceramic DIP
Weight 2.09 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of
package
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Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
MAXIMUM
FORWARD
VOLTAGE
MATCH
REVERSE
RECOVERY TIME
trr
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
RECOVERY
TIME
MAXIMUM
REVERSE
CURRENT
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
I = IR = 10 mAdc
F
V
F1
Ct
t
i
= 1 mAdc
V
F5
fr
rr
I = 100 mA
I
I
VR = 0 V
F = 1 MHz
pF
F
R1
R2
I = 100 mA
R = 100 ohms
L
I = 10 mA
PART
(Note 1)
V
VR = 40 V
VR = 20 V
F
F
NUMBER
µA
nA
ns
15
ns
10
mV
5
1N6101
1
0.1
25
4.0
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright 2003
Microsemi
Page 1
5-03-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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