Datasheet > 1N6101_1

1N6101_1

更新时间： 2024-11-17 07:22:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	248K
描述
Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

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1N6101_1 数据手册

1N6101

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 16-PIN package for use as steering diodes

protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the

positive side of the power supply line or to ground (see figure 1). An external TVS diode

may be added between the positive supply line and ground to prevent overvoltage on

the supply rail. They may also be used in fast switching core-driver applications. This

includes computers and peripheral equipment such as magnetic cores, thin-film

memories, plated-wire memories, etc., as well as decoding or encoding applications.

These arrays offer many advantages of integrated circuits such as high-density

packaging and improved reliability. This is a result of fewer pick and place operations,

smaller footprint, smaller weight, and elimination of various discrete packages that may

not be as user friendly in PC board mounting.

16-PIN Ceramic DIP

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Hermetic Ceramic Package

•

High Frequency Data Lines

Isolated Diodes to Eliminate Cross-Talk Voltages

High Breakdown Voltage V_BR> 75 V at 5 µA

Low Leakage I_R< 100nA at 40 V

Low Capacitance C < 4.0 pF

Switching Speeds less than 10 ns

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N6101 for a JANTX screen.

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20 µs

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25^oC

600 mW Power Dissipation per Package @ 25^oC (Note 4)

Operating Junction Temperature range –65 to +150^oC

Storage Temperature range of –65 to +200^oC

•

16-PIN Ceramic DIP

Weight 2.09 grams (approximate)

Marking: Logo, part number, date code

Pin #1 to the left of the indent on top of

package

•

Carrier Tubes; 25 pcs (standard)

NOTE 1: Each Diode

NOTE 2: Pulsed: P_W= 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/^oC above +25^oC

NOTE 4: Derate at 4.8 mW/^oC above +25^oC

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified

MAXIMUM

FORWARD

VOLTAGE

MATCH

REVERSE

RECOVERY TIME

trr

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

RECOVERY

TIME

MAXIMUM

REVERSE

CURRENT

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

I = I_R= 10 mAdc

C_t

= 1 mAdc

I = 100 mA

V_R= 0 V

F = 1 MHz

I = 100 mA

R = 100 ohms

I = 10 mA

PART

(Note 1)

V_R= 40 V

V_R= 20 V

NUMBER

µA

1N6101

0.1

4.0

NOTE 1: Pulsed: P_W= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

Microsemi

Page 1

5-03-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

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与1N6101_1相关器件

型号	品牌	获取价格	描述	数据表
1N6101E3	MICROSEMI	获取价格	Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-16
1N6102	NJSEMI	获取价格	500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS
1N6102	SEMTECH	获取价格	500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS
1N6102	SENSITRON	获取价格	TRANSIENT VOLTAGE SUPPRESSOR DIODE (500WATT)
1N6102	STMICROELECTRONICS	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN
1N6102A	SENSITRON	获取价格	TRANSIENT VOLTAGE SUPPRESSOR DIODE (500WATT)
1N6102A	SEMTECH	获取价格	QPL 500 Watt Axial Leaded TVS
1N6102A	STMICROELECTRONICS	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN
1N6102A	NJSEMI	获取价格	Diode TVS Single Bi-Dir 5.2V 500W 2-Pin
1N6102A.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon

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