5秒后页面跳转
1N6101 PDF预览

1N6101

更新时间: 2024-02-08 22:27:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管测试
页数 文件大小 规格书
1页 25K
描述
MONOLITHIC AIR ISOLATED DIODE ARRAY

1N6101 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.03
Is Samacsys:N最大正向电压 (VF):1 V
JESD-609代码:e0最高工作温度:175 °C
最大功率耗散:0.4 W最大重复峰值反向电压:65 V
最大反向电流:0.025 µA最大反向恢复时间:0.005 µs
反向测试电压:20 V子类别:Other Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

1N6101 数据手册

  
1N6101  
A Microsemi Company  
580 Pleasant St.  
Watertown, MA 02472  
Phone: 617-924-9280  
Fax: 617-924-1235  
DIODE ARRAY PRODUCT SPECIFICATION  
MONOLITHIC AIR ISOLATED  
DIODE ARRAY  
16  
15  
1
2
3
4
FEATURES:  
14  
13  
· HERMETIC CERAMIC PACKAGE  
· Bv > 75V at 5uA  
· Ir < 100nA at 40V  
· C < 4.0 pF  
12  
11  
5
6
7
10  
9
8
Absolute Maximum Ratings:  
Symbol  
Parameter  
Limit  
Unit  
.320  
.290  
.310  
.220  
.200  
MAX  
.005  
MIN  
VBR(R) *1 *2 Reverse Breakdown Voltage  
75  
Vdc  
.200  
.100  
IO  
*1 * 3 Continuous Forward Current  
*1 Peak Surge Current (tp= 1/120 s)  
*4 Power Dissipation per Junction @ 25°C  
300  
500  
400  
600  
mAdc  
mAdc  
mW  
.023  
.014  
IFSM  
PT1  
PT2  
Top  
Tstg  
.070  
.030  
.785  
MAX  
*4  
Power Dissipation per Package @ 25°C  
Operating Junction Temperature Range  
Storage Temperature Range  
mW  
-65 to +150 °C  
-65 to +200 °C  
.098  
MAX  
.100  
BSC  
.060  
.015  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%  
NOTE 3: Derate at 2.4mA/°C above +25 °C  
NOTE 4: Derate at 4.0mW/°C above +25 °C  
.015  
.008  
O-15  
Electrical Characteristics (Per Diode) @  
25°C unless otherwise specified  
PACKAGE OUTLINE  
Symbol Parameter  
Conditions  
Min  
Max Unit  
Vf1  
IR1  
IR2  
Ct  
tfr  
trr  
Forward Voltage  
Reverse Current  
Reverse Current  
Capacitance (pin to pin)  
Forward Recovery Time  
If = 100mAdc *1  
VR = 40 Vdc  
VR = 20 Vdc  
VR = 0Vdc; f = 1 MHz  
If = 100mAdc  
1
Vdc  
0.1 uAdc  
25 nAdc  
4.0 pF  
15  
10  
5
ns  
ns  
mV  
Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms  
Forward Voltage Match If = 10 mA  
VF5  
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge  
Sertech reserves the right to make changes to any product design, specification or other  
information at any time without prior notice.  
MSC1016.PDF Rev - 11/25/98  

与1N6101相关器件

型号 品牌 描述 获取价格 数据表
1N6101_09 MICROSEMI ISOLATED DIODE ARRAY

获取价格

1N6101_1 MICROSEMI Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

获取价格

1N6101E3 MICROSEMI Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-16

获取价格

1N6102 NJSEMI 500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS

获取价格

1N6102 SEMTECH 500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS

获取价格

1N6102 SENSITRON TRANSIENT VOLTAGE SUPPRESSOR DIODE (500WATT)

获取价格