Datasheet > 1N60PW

1N60PW

更新时间： 2024-11-19 14:55:15

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	173K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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1N60PW 数据手册

1N60PW,1N60SW

Schottky Barrier Diodes

Features

DESCRIPTION

Cathode

• High reliability

Anode

• Low forward voltage and reverse current

Applications

Top View

Simplified outline SOD-123 and symbol

• For electronic calculator, etc

• Low current rectification and high speed switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

Peak Forward Current

I_FM

150

℃

Average Forward Rectified Current

I_F(AV)

Surge Forward Current

Junction Temperature

I_surge

T_j

500

125

-55 to +125

℃

Storage Temperature Range

T_stg

Characteristics (T_a= 25℃)

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Current

at V_F= 1 V

I_F

Forward Voltage

at I_F= 1 mA

at I_F= 5 mA

V_F

0.5

0.7

Reverse Current

at V_R= 10 V

I_R

1N60PW

1N60SW

100

µA

Rectification Efficiency

at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz

1 / 3

Dated：04/08/2023 Rev: 03

12 3

中文翻译

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