Datasheet > 1N60P

1N60P

更新时间： 2024-09-14 22:37:43

品牌	Logo	应用领域
美丽微 - FORMOSA		肖特基二极管
页数	文件大小	规格书
2页	81K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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1N60P 数据手册

FMS

1N60/1N60P

Schottky Barrier Diode

Features

1. High reliability

2. Low reverse current and low forward voltage

Applications

Low current rectification and high speed switching

Construction

Silicon epitaxial planar

Absolute Maximum Ratings

T_j=25℃

Parameter

Test Conditions

Type

1N60

Symbol

V_RRM

I_FSM

I_F

Value

Unit

Repetitive peak reverse voltage

1N60P

1N60

Peak forward surge current

Forward continuous current

Storage temperature range

t_p≦1 s

150

℃

1N60P

1N60

500

T_a=25℃

1N60P

I_F

T_stg

-65~+125

Maximum Thermal Resistance

T_j=25℃

Parameter

Test Conditions

Symbol

R_thJA

Value

250

Unit

K/W

Junction ambient

on PC board 50mm×50mm×1.6mm

Formosa MicroSemi CO., LTD.

www.formosams.com

Rev. 2, 22-Nov-2002

1/2

中文翻译

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与1N60P相关器件

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1N60P-AP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.05A, 45V V(RRM), Silicon, DO-35, ROHS COMPLIANT PA
1N60P-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.05A, 45V V(RRM), Silicon, DO-35, ROHS COMPLIANT PA
1N60PG-T92-B	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PG-T92-K	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PG-T92-R	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PL-T92-B	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PL-T92-K	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PL-T92-R	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60P-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.05A, 45V V(RRM), Silicon, DO-35, ROHS COMPLIANT PA
1N60PW	SEMTECH	获取价格	Schottky Barrier Diode