Datasheet > 1N60P

1N60P

更新时间： 2024-11-18 04:24:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		小信号肖特基二极管
页数	文件大小	规格书
2页	140K
描述
SMALL SIGNAL SCHOTTKY DIODES

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中文翻译

获取价格

数据手册

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1N60P 数据手册

GALAXY ELECTRICAL

1N60P

VOLTAGE RANGE: 45 V

CURRENT: 0.1 A

SMALL SIGNAL SCHOTTKY DIODES

FEATURES

Metal sillicon junction majority carrier conduction

High current capability,Low forward voltage drop

Extremely low reverse current I_R

DO - 35(GLASS)

Ultra speed switching characteristics

Small temperature coefficient of forward

ffffff characteristics

Satisfactory wave detection efficiency

For use in RECORDER. TV. RADIO. TELEPHONE

as detectors,super high speed switching circuits,

small current rectifier

MECHANICAL DATA

Case:JEDEC DO--35,glass case

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Parameters

Value

Symbols

UNITS

1N60P

Repetitive peak reverse voltage

V_RRM

I_F

Forw ard continuous current

T_A=25

500

Peak forw ard surge current (t=1s)

Storage and junction temperature range

I_FSM

T_STG/T_J

T_L

XX- 55 ---- + 125

230

Maximum lead temperature for soldering during 10s at 4mm from case

ELECTRICAL CHARACTERISTICS

Value

Parameters

Symbols

V_F

Test Conditions

UNITS

Min.

Typ.

Max.

0.5

I_F=1mA

I_F=200mA

0.24

Forward voltage

Reverse current

0.65

0.5

1.0

V_R=15V

I_R

Junction capacitance

V_R=10V f=1MHz

6.0

C_J

V=3V f=30MHz

Detection efficiency (See FIG. 4)

Reverse recovery time

60.0

C_L=10pF R_L=3.8K

I_F=I_R=1mA Irr=1mA R_C=100

1.0

t_rr

Thermal resistance junction to ambient

400

R_θ

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0265007

中文翻译

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